Продукция > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays

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Part Status

FET Type

FET Feature

Drain to Source Voltage (Vdss)

Current - Continuous Drain (Id) @ 25°C

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Gate Charge (Qg) (Max) @ Vgs

Input Capacitance (Ciss) (Max) @ Vds

Power - Max

Operating Temperature

Mounting Type

Package / Case

Supplier Device Package



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  • AON7804
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  • MOSFET 2N-CH 30V 9A 8DFN
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  • Diodes Incorporated
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    50014.84
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  • Diodes Incorporated
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  • 10.8928
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  • Diodes Incorporated
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  • Trans MOSFET N/P-CH 20V 0.54A/0.43A 6-Pin SOT-363 T/R
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  • Diodes Incorporated
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    100.50256
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    1030.59
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    50011.88
    10009.14
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  • Diodes Incorporated
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    50011.88
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  • Diodes Incorporated
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  • 10.7344
    100.51408
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  • 144.7
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  • Diodes Incorporated
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  • 14 недель
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    50012.14
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  • Diodes Zetex
  • E02:0323_06140790
  • Trans MOSFET N/P-CH 30V 3.8A/2.5A Automotive 6-Pin TSOT-26 T/R
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  • 42 недели
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  • 18.53
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  • Diodes Incorporated
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  • MOSFET 2N-CH 20V 0.54A SOT-26
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  • 18 недель
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    10028.03
    50020.55
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  • Diodes Incorporated
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  • MOSFET 2N-CH 20V 0.54A SOT-26
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  • Rohm Semiconductor
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  • 10.7632
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    10023.5
    50013.3
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    10024.44
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    1043.99
    10033.01
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    100.52128
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  • Vishay Siliconix
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  • 1
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    100.62928
    1000.471744
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    1038.3
    10028.71
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  • Vishay Siliconix
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  • 24 недели
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    100.62928
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    1038.3
    10028.71
    50021.06
    100016.27
  • SI1026X-T1-GE3
  • Vishay Siliconix
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  • 22 недели
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  • SSM6N44FE,LM
  • Toshiba Semiconductor and Storage
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  • 18 недель
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    1035.49
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    50011.83
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    100.5832
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    10000.1490832
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    1035.49
    10020.91
    50011.83
    10009.07
  • SSM6N44FE,LM
  • Toshiba Semiconductor and Storage
  • SSM6N44FELMTR-ND
  • MOSFET 2N-CH 30V 0.1A ES6
  • Discrete Semiconductor Products
  • 76000
  • 18 недель
  • Tape & Reel (TR)
  • 4000
  • 40000.125856
  • 40007.66